Spatially highly resolved study of AFM scanning tip-quantum dot local interaction
Abstract
Scanning-gate imaging of semiconductor quantum dots (QDs) promises access to probability distributions of quantum states. It could therefore be a novel tool for designing and optimizing tailored quantum states in such systems. A detailed study of a lithographically defined semiconductor QD in the Coulomb-blockade regime is presented, making use of the scanning-gate technique at a base temperature of 300 mK. The method allows a one-by-one manipulation of electrons in the structure. The obtained images interpreted with a suitable QD model guide the way to a local investigation of the electronic interior of the QD. Future perspectives of scanning-gate experiments on QDs are discussed. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000031828Publication status
publishedExternal links
Journal / series
New Journal of PhysicsVolume
Pages / Article No.
Publisher
IOP PublishingOrganisational unit
03439 - Ensslin, Klaus / Ensslin, Klaus
08835 - Ihn, Thomas (Tit.-Prof.)
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