Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures
Publication status
publishedExternal links
Journal / series
Journal of Applied PhysicsVolume
Pages / Article No.
Publisher
American Institute of PhysicsOrganisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
03974 - Leuthold, Juerg / Leuthold, Juerg
Notes
Received 22 November 2013, Accepted 13 January 2014, Published online 29 January 2014.More
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